ON Semiconductor MMFT1N10ET1 MOSFET Overview

The MMFT1N10ET1 from ON Semiconductor is a high-performance, N-channel Power MOSFET designed for a wide range of applications that require efficient power management and high reliability. This MOSFET is a testament to ON Semiconductor's commitment to providing industry-leading solutions that meet the evolving needs of modern electronics.

Key Features

• Device Type: N-channel MOSFET
• Package: DPAK (TO-252) surface mount package for compact design
• Drain-to-Source Voltage (V<sub>DS): 100V, providing a wide operating range for various applications
• Continuous Drain Current (I<sub>D): 9.2 A at 25°C, ensuring high current handling capability
• R<sub>DS(on): Low on-resistance of 0.28 ohms (max) at V<sub>GS = 10V, offering reduced conduction losses and improved efficiency
• Gate Charge (Q<sub>g): Low total gate charge for faster switching performance

Applications

The MMFT1N10ET1 MOSFET is suitable for a variety of applications, including:

• Power supply regulation and conversion
• DC-DC converters
• Motor drives and control systems
• Automotive applications
• Switching regulators
• LED lighting solutions

Reliability and Performance

ON Semiconductor's MMFT1N10ET1 is designed with reliability in mind, featuring robust thermal performance for improved longevity. The MOSFET operates over a wide temperature range, making it suitable for challenging environments. Its fast switching speed reduces switching losses and enhances overall system efficiency, which is critical for power-sensitive applications.

Environmental Compliance

In alignment with global environmental standards, the MMFT1N10ET1 MOSFET is RoHS compliant, minimizing the environmental impact by excluding hazardous substances. This commitment to sustainability ensures that the product is suitable for eco-friendly applications and adheres to international regulations.