ON Semiconductor MMSF4N01HDR2 N-Channel MOSFET

The ON Semiconductor MMSF4N01HDR2 is a high-performance N-Channel MOSFET designed to deliver efficient power management and signal processing in a wide range of applications. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, which are engineered to reduce power consumption and extend battery life in electronic systems.

Key Features

• Device Type: N-Channel MOSFET
• Package: SO-8
• Drain-Source Voltage (V<sub>DS): 30V
• Continuous Drain Current (I<sub>D): 3.4A
• Power Dissipation (P<sub>D): 1.25W
• R<sub>DS(on): Low on-resistance for improved efficiency
• Gate Charge (Q<sub>g): Low to reduce switching losses
• Operating Temperature: -55°C to 150°C

Applications

The MMSF4N01HDR2 MOSFET is suitable for a variety of applications, including:

• Power Management Circuits
• DC/DC Converters
• Battery Powered Devices
• Motor Control Systems
• Switching Regulators
• Load Switches

Product Advantages

This N-Channel MOSFET from ON Semiconductor offers several advantages that make it a preferred choice for designers. The low on-resistance minimizes conduction losses, while the low gate charge enables faster switching speeds, reducing switching losses. The device's high current capacity and thermal performance ensure reliability even under demanding conditions. Furthermore, the compact SO-8 package allows for space-saving designs in densely populated PCBs.

With its robust construction and efficient performance, the MMSF4N01HDR2 is an ideal solution for engineers looking to optimize their power management systems with a reliable and cost-effective MOSFET from a trusted manufacturer in the semiconductor industry.