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MUN5134DW1T1G

Part No MUN5134DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 2PNP 50V SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 22kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN5134
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 645728-MUN5134DW1T1G
Ultra Librarian 3D Model Ultra Librarian MUN5134DW1T1G CAD Model

Description

ON Semiconductor MUN5134DW1T1G - PNP Transistor Array

The MUN5134DW1T1G from ON Semiconductor is a high-performance PNP transistor array designed to cater to a wide range of applications requiring multiple PNP transistors in a single package. This device is ideal for use in applications such as signal processing, power management, and other electronic circuits that require high current gain and low saturation voltage.

This transistor array features a monolithic dual design, which means it contains two independent PNP transistors in a single SOT-363 package. This compact package design allows for a reduction in PCB space requirements, which is crucial for modern electronic devices that demand miniaturization without compromising on performance.

The MUN5134DW1T1G boasts excellent current gain characteristics with a minimum hFE of 100 at 10 mA, making it suitable for amplification purposes. Moreover, each transistor can handle a collector current of up to 100 mA, providing sufficient current for a variety of applications. The low collector-emitter saturation voltage of typically 0.3 V at 10 mA ensures efficient operation with minimal power loss.

With its operating junction temperature range of -55°C to +150°C, the MUN5134DW1T1G is designed to perform reliably in harsh environments. Additionally, this device is characterized for moisture sensitivity level 1 (MSL 1) according to J-STD-020, ensuring long-term reliability even under conditions of high humidity.

ON Semiconductor has designed the MUN5134DW1T1G with an environmentally friendly "green" molding compound, which is compliant with RoHS (Restriction of Hazardous Substances) regulations. This commitment to sustainability makes the MUN5134DW1T1G an excellent choice for eco-conscious consumers and businesses looking to reduce their environmental impact.

In summary, the MUN5134DW1T1G PNP transistor array from ON Semiconductor is a versatile and reliable component that offers a combination of high performance, compact design, and environmental responsibility, making it an excellent choice for a wide range of electronic applications.

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