BC847BFZ-7B - NPN Bipolar Transistor

The BC847BFZ-7B is a high-quality NPN bipolar (BJT) transistor from Diodes Incorporated, designed for general-purpose amplification and switching applications. This transistor is a part of the industry-standard SOT-23 small-surface mount package, making it suitable for automated assembly processes and space-constrained applications.

Key Features

• Transistor Type: NPN - This device is designed to support applications requiring a high current gain (hFE) characteristic of NPN transistors.
• Current Rating: It can handle continuous collector currents up to 100mA, making it suitable for a wide range of low-power applications.
• Voltage Ratings: With a collector-emitter voltage (Vceo) of 45V, it can be used in circuits with moderate voltage requirements.
• Power Dissipation: The BC847BFZ-7B has a total power dissipation of 250mW, ensuring reliable operation under typical ambient temperatures.
• High Gain Bandwidth Product: With a transition frequency (fT) of 100MHz, this transistor is capable of operating at relatively high frequencies, which is beneficial for amplification in radio frequencies.
• RoHS Compliant: This component is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly and suitable for use in a wide range of markets.

Applications

The BC847BFZ-7B transistor is versatile and can be used in various electronic circuits. It is commonly found in:

• Low noise signal amplifiers
• Audio amplifiers
• Switching circuits
• Linear amplification
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability

Diodes Incorporated is known for its commitment to quality, and the BC847BFZ-7B is no exception. It is manufactured in state-of-the-art facilities, ensuring high reliability and performance consistency. Customers can trust this component for its durability and stable operation over a wide range of temperatures and conditions.