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NDD60N900U1T4G

Part No NDD60N900U1T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5.9A DPAK-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 360pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1082831-NDD60N900U1T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDD60N900U1T4G CAD Model

Description

ON Semiconductor NDD60N900U1T4G Power MOSFET

The ON Semiconductor NDD60N900U1T4G is a high-performance power MOSFET designed to cater to a wide range of applications requiring efficient power management and conversion. This device is an integral component for designers focusing on energy efficiency and reliability in their power supply designs.

Key Features

  • Low On-Resistance: The NDD60N900U1T4G boasts an ultra-low on-resistance (RDS(on)), minimizing conduction losses and enhancing overall efficiency in high-current applications.
  • High Current Capability: With the ability to handle a continuous drain current (ID) of up to 60A, this MOSFET can manage significant power levels, making it suitable for demanding environments.
  • High Voltage Threshold: Rated for a maximum drain-source voltage (VDSS) of 900V, it provides excellent voltage headroom for applications prone to high voltage transients.
  • Fast Switching Speed: The device is engineered for rapid switching, reducing transition losses and improving performance in high-frequency circuits.
  • Robust Thermal Performance: The NDD60N900U1T4G is encapsulated in a TO-252 (DPAK) package, known for its excellent thermal conduction and dissipation, ensuring stability under thermal stress.

Applications

The versatility of the NDD60N900U1T4G allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • DC-DC Converters
  • Motor Drives
  • Lighting Systems
  • High-Efficiency Power Management Solutions

Reliability and Quality

ON Semiconductor is committed to delivering high-quality components that meet the rigorous standards of the electronics industry. The NDD60N900U1T4G is no exception, with its design and manufacturing processes focused on long-term reliability and performance under stress. It is RoHS compliant and adheres to ON Semiconductor's stringent quality control measures, ensuring that it meets the expectations of the most demanding applications.

Whether you are developing power supplies, optimizing energy consumption, or designing high-performance electronic systems, the ON Semiconductor NDD60N900U1T4G power MOSFET is an excellent choice for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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