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NDS356AP-NB8L005A

Part No NDS356AP-NB8L005A
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.1A SOT23-3  /  P-Channel 30 V 1.1A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tray
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number NDS356
MSL Level Vendor Undefined
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1
Win Source Part Number 1081910-NDS356AP-NB8L005A
Ultra Librarian 3D Model Ultra Librarian NDS356AP-NB8L005A CAD Model

Description

ON Semiconductor NDS356AP-NB8L005A Product Overview

The NDS356AP-NB8L005A from ON Semiconductor is a state-of-the-art P-Channel MOSFET designed to deliver both high performance and reliability for a wide range of applications. This MOSFET is an ideal choice for power management tasks where efficiency and space-saving are of paramount importance.

Key Features

  • Low On-Resistance: The NDS356AP-NB8L005A boasts a low on-resistance, which translates to minimal power loss during operation and enhances overall efficiency.
  • High Threshold Voltage: With a high threshold voltage, this MOSFET ensures stable operation and reduces the risk of unintentional turn-on due to noise or fluctuations in the circuit.
  • Advanced PowerTrench® Technology: This product incorporates ON Semiconductor's proprietary PowerTrench® technology, which optimizes the MOSFET for low gate charge and capacitance, resulting in faster switching speeds and reduced power consumption.
  • Compact Footprint: The NDS356AP-NB8L005A comes in a small surface-mount package, making it suitable for applications where PCB real estate is limited.
  • RoHS Compliant: This product meets the requirements of the RoHS directive, making it an environmentally friendly choice for electronic designs.

Applications

The versatility of the NDS356AP-NB8L005A allows it to be used in various applications, including:

  • Power management for portable and battery-powered devices
  • Load switch circuits
  • DC/DC converters
  • Motor control circuits

Product Specifications

With a continuous drain current of -1.6A and a drain-source voltage of -30V, the NDS356AP-NB8L005A is capable of handling moderate power levels. The product's maximum power dissipation is 0.5W, and it operates over a temperature range from -55°C to 150°C, ensuring reliable performance under a broad spectrum of environmental conditions.

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The NDS356AP-NB8L005A is manufactured under rigorous standards, ensuring that it meets the reliability expectations for commercial-grade components.

For engineers and designers looking for a robust P-Channel MOSFET with superior efficiency and compact size, the NDS356AP-NB8L005A from ON Semiconductor is an exceptional choice that balances performance with reliability.

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