ON Semiconductor NGTB20N120IH IGBT

The ON Semiconductor NGTB20N120IH is a high-performance insulated gate bipolar transistor (IGBT) designed for a wide range of power electronics applications. This IGBT is part of ON Semiconductor's energy-efficient portfolio and is engineered to deliver exceptional efficiency, reliability, and thermal performance. It is ideal for use in motor drives, uninterruptible power supplies (UPS), inverters, and other power conversion applications that require high-speed switching and low conduction losses.

Key Features and Benefits

• High Current Capability: The NGTB20N120IH is capable of handling continuous collector currents up to 40A, making it suitable for high-power applications.
• Low On-State Voltage: This IGBT has a low on-state voltage drop, which helps to minimize conduction losses and improve overall efficiency.
• High Switching Speed: With a fast switching speed, this IGBT can operate at higher frequencies, enabling more efficient power conversion and control.
• Co-Packaged Free Wheeling Diode: The device includes an integrated free-wheeling diode, providing protection against reverse voltage and reducing component count in circuit design.
• Robust Temperature Performance: The NGTB20N120IH can operate over a wide temperature range, maintaining stable performance even under harsh conditions.
• Low EMI: The device is designed to produce low electromagnetic interference, making it suitable for applications where EMI must be minimized.

Technical Specifications

• Collector-Emitter Voltage (V<sub>CE): 1200V
• Collector Current (I<sub>C): 40A
• Gate-Emitter Threshold Voltage (V<sub>GE(th)): 4.5V
• Maximum Operating Temperature: +150°C
• Package / Case: TO-247

The NGTB20N120IH from ON Semiconductor is a testament to the company's commitment to providing advanced power management solutions that meet the demands of modern electronic systems. With its robust design and superior electrical characteristics, this IGBT is positioned to be a key component in driving efficiency and performance in power electronics.