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NJT4030PT1G

Part No NJT4030PT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 3A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 500mV @ 300mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 1A, 1V
Maximum Power Dissipation 2W
Frequency - Transition 160MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 025381-NJT4030PT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NJT4030P
Introduction Date August 17, 2006
ECCN EAR99
Country of Origin Malaysia, Morocco
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian NJT4030PT1G CAD Model

Description

Product Overview: NJT4030PT1G from ON Semiconductor

The NJT4030PT1G is a high-performance N-Channel Power MOSFET designed by ON Semiconductor, a leading provider of semiconductor-based solutions. This power MOSFET is a crucial component in modern electronic systems, offering energy-efficient power management and switching capabilities. The NJT4030PT1G is suitable for a variety of applications, including power supply, motor control, lighting, and automotive systems.

Key Features

  • High Efficiency: The device boasts a low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency.
  • Thermal Performance: With an optimized package design, the NJT4030PT1G ensures excellent thermal performance, making it reliable for operations in high-temperature environments.
  • High Current Capability: This MOSFET can handle high currents, which is essential for applications requiring robust power handling.
  • Low Gate Charge: The low gate charge (Q<sub>G) of the NJT4030PT1G allows for faster switching speeds, reducing switching losses and improving performance in high-frequency applications.

Electrical Characteristics

The NJT4030PT1G operates with a drain-source voltage (V<sub>DSS) of up to 30V, and a continuous drain current (I<sub>D) of 50A at 25°C, which makes it a robust option for high-power applications. Its gate threshold voltage (V<sub>GS(th)) is specified to be within a range that ensures stable operation across various conditions.

Applications

The versatility of the NJT4030PT1G allows it to be used across a broad range of applications. It is particularly well-suited for DC-DC converters, power management in portable devices, synchronous rectification in power supplies, and as a switch in various types of motor controls. Its high reliability also makes it a preferred choice for automotive applications where long-term performance is critical.

Package and Quality

Packaged in a compact, surface-mountable format, the NJT4030PT1G is designed for easy integration into various circuit designs. ON Semiconductor's commitment to quality ensures that each device meets strict standards for performance and reliability, making the NJT4030PT1G a dependable component for any power management task.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2224 $56.7120
540+ $0.2083 $112.4820
835+ $0.2013 $168.0855
1,200+ $0.1873 $224.7600
1,555+ $0.1802 $280.2110
1,945+ $0.1732 $336.8740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 131,494 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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