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NJVMJD42CT4

Part No NJVMJD42CT4
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 6A DPAK / Bipolar (BJT) Transistor PNP 100 V 6 A 3MHz 1.75 W Surface Mount DPAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 4V
Power - Max 1.75 W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500 pcs
Win Source Part Number 1383035-NJVMJD42CT4
Ultra Librarian 3D Model Ultra Librarian NJVMJD42CT4 CAD Model

Description

ON Semiconductor NJVMJD42CT4 Power Transistor

The NJVMJD42CT4 from ON Semiconductor is a robust bipolar power transistor designed for high-power switching applications and linear amplification. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions and high-performance components for a wide array of electronic systems.

The NJVMJD42CT4 is characterized by its exceptional power handling capabilities and thermal performance. It is housed in a compact and durable package, which ensures reliability even in the most demanding environments. This makes it an ideal choice for designers looking to optimize their power circuits in terms of space and thermal efficiency.

Key Features:

  • High Collector-Emitter Voltage (VCEO): The device is capable of withstanding high voltage across the collector-emitter terminals, which is critical for applications that experience high voltage transients.
  • Low Collector Saturation Voltage: This feature allows for more efficient operation at high currents, reducing power losses and improving overall efficiency.
  • Fast Switching Speeds: The NJVMJD42CT4 can switch on and off rapidly, which is beneficial for applications that require quick response times and high-frequency operation.
  • High Current Handling: With its ability to manage significant current levels, this transistor is well-suited for handling high power loads.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure stable operation over a wide temperature range and enhance its longevity.

Applications:

The NJVMJD42CT4 is versatile and can be used in a variety of applications, including but not limited to:

  • Power regulators
  • DC-DC converters
  • Motor controllers
  • Switching circuits
  • Audio amplifiers
  • Power management systems

In summary, the NJVMJD42CT4 from ON Semiconductor is a reliable and efficient power transistor that offers high voltage capability, low saturation voltage, fast switching, and robust thermal performance. It is an excellent choice for engineers who demand the best in power transistor technology for their high-performance applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5889 $50.0565
210+ $0.4832 $101.4720
325+ $0.4681 $152.1325
445+ $0.4530 $201.5850
575+ $0.4379 $251.7925
765+ $0.3926 $300.3390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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