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NSBA123JDXV6T1G

Part No NSBA123JDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.5W SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 500mW
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 1083604-NSBA123JDXV6T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NSBA123JDXV6T1G CAD Model

Description

The NSBA123JDXV6T1G is a high-performance, energy-efficient transistor produced by ON Semiconductor, a leader in innovative power and sensing technologies. This product is designed to meet the rigorous demands of modern electronic circuits, providing reliable switching and amplification with minimal power loss.

Key Features

  • Low Voltage Operation: The transistor operates at low voltages, making it suitable for battery-powered devices and portable electronics.
  • High Current Gain Bandwidth Product: It offers excellent frequency response, making it ideal for amplification in communication devices.
  • Energy Efficiency: With its low on-state voltage drop and minimal quiescent current, the NSBA123JDXV6T1G ensures energy-efficient operation, reducing the overall power consumption of the device it is used in.
  • Small Surface-Mount Package: The compact SOT-563 package is space-saving and perfect for high-density PCB layouts.
  • Robust Thermal Performance: It is designed to dissipate heat effectively, ensuring stability and reliability even under high switching frequencies or large currents.

Applications

The versatility of the NSBA123JDXV6T1G allows it to be used in a wide range of applications. It is particularly well-suited for:

  • Power management circuits
  • DC-DC converters
  • Portable and wireless devices
  • Signal amplification in audio and video equipment
  • Switching applications requiring low power loss

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NSBA123JDXV6T1G is built to stringent quality standards, ensuring that it meets the reliability requirements of commercial, industrial, and automotive industries. With its excellent performance characteristics and ON Semiconductor's reputation for quality, this transistor is an excellent choice for designers looking for a dependable component for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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