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NSBA144WDXV6T1G

Part No NSBA144WDXV6T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.5W SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 28 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA - 500mW Surface Mount SOT-563
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package SOT-563, SOT-666
Case / Package SOT-563
Family Name NSBA144
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 4000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887640-NSBA144WDXV6T1G
Ultra Librarian 3D Model Ultra Librarian NSBA144WDXV6T1G CAD Model

Description

The NSBA144WDXV6T1G is a high-performance, dual PNP Bipolar Transistor from ON Semiconductor, designed to meet the rigorous demands of modern electronic applications. This advanced semiconductor device is well-suited for use in a variety of circuits, offering excellent power control and amplification capabilities.

Key Features:

  • Transistor Type: The device features a dual PNP transistor configuration, which is ideal for applications requiring matched transistor pairs.
  • Current Rating: It can handle a continuous collector current of up to 100 mA, making it suitable for moderate power applications.
  • Voltage Ratings: The collector-emitter voltage (VCEO) is rated at 50V, and the collector-base voltage (VCBO) is rated at 50V, providing a good range for various circuit designs.
  • Power Dissipation: With a power dissipation of 250 mW, this transistor can sustain moderate thermal conditions without compromising performance.
  • Gain Bandwidth Product (fT): The device offers a transition frequency of 50 MHz, which is beneficial for applications requiring high-speed switching.
  • Package: Housed in a SOT-363 package, the NSBA144WDXV6T1G is compact and suitable for space-constrained applications.
  • Temperature Range: It operates within a junction temperature range of -55°C to +150°C, ensuring reliability under varying environmental conditions.
  • Compliance: The device is RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Applications:

The NSBA144WDXV6T1G is versatile and can be utilized in a wide range of applications, including:

  • Signal processing
  • Power management
  • Audio amplifiers
  • Switching and linear amplification circuits
  • Driver stages in audio and signal amplifiers

With its robust design and reliable performance, the NSBA144WDXV6T1G from ON Semiconductor is an excellent choice for designers and engineers looking to incorporate a high-quality dual PNP transistor into their electronic designs. Its compact size, combined with its electrical characteristics, make it a versatile component for both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
655+ $0.0882 $57.7710
1,595+ $0.0725 $115.6375
2,470+ $0.0702 $173.3940
3,405+ $0.0679 $231.1995
4,395+ $0.0658 $289.1910
5,885+ $0.0589 $346.6265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,000 pieces
MOQ: 655 pcs
Order Increment : 1 pcs
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