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ZX5T955GTA

Part No ZX5T955GTA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 140V 4A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS PNP 140V 4A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 140V
Max Vce (sat) 360mV @ 300mA, 3A
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 1A, 5V
Maximum Power Dissipation 3W
Frequency - Transition 120MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 036865-ZX5T955GTA
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name ZX5T955G
Introduction Date August 18, 2004
ECCN EAR99
Country of Origin China, Germany
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian ZX5T955GTA CAD Model

Description

The ZX5T955GTA is a high-performance, energy-efficient P-channel MOSFET brought to you by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, and analog semiconductor markets.

Key Features

  • Low Threshold Voltage: This device features a low gate threshold voltage, making it suitable for low voltage applications and ensuring efficient operation at lower gate voltages.
  • High Power Efficiency: The ZX5T955GTA is designed for high power efficiency, which is essential for reducing energy consumption in power management circuits.
  • Advanced Packaging: Enclosed in a small and leadless DFN2020-6 (Type B) package, it offers a compact footprint that is ideal for space-constrained applications.
  • High Continuous Drain Current: It supports a high continuous drain current, providing robust performance for a wide range of applications.
  • Low On-Resistance: The MOSFET is characterized by low on-resistance, which minimizes conduction losses and improves overall efficiency.

Applications

The ZX5T955GTA is versatile and can be used in various applications, including:

  • Power Management Circuits
  • Load Switches
  • Battery Management Systems
  • DC-DC Converters
  • Portable Devices

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -30V Gate-Source Voltage (V<sub>GS) ±20V Continuous Drain Current (I<sub>D) -6.7A Power Dissipation (P<sub>D) 2.4W Operating Temperature Range -55°C to +150°C

With its superior performance and reliability, the ZX5T955GTA from Diodes Incorporated stands out as a top choice for designers seeking a high-quality P-channel MOSFET for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1689 $50.6700
725+ $0.1386 $100.4850
1,120+ $0.1343 $150.4160
1,540+ $0.1300 $200.2000
1,995+ $0.1256 $250.5720
2,665+ $0.1126 $300.0790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 110,800 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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