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2SK3430-Z-E2-AZ

Part No 2SK3430-Z-E2-AZ
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description 2SK3430 - Nch Single Power MOSFE
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 7.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta), 84W (Tc)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package TO-263, TO-220SMD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
Win Source Part Number 1037770-2SK3430-Z-E2-AZ
Ultra Librarian 3D Model Ultra Librarian 2SK3430-Z-E2-AZ CAD Model

Description

The Renesas Electronics America 1037770-2SK3430-Z-E2-AZ is an obsolete single N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor).

  • Category: Discrete Semiconductor Products
  • FET Type: FETs, MOSFETs - Single FETs, MOSFETs
  • Package: Bulk
  • Standard Package: 1 piece
  • Drain-to-Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 80A @ 25°C
  • Rds On (maximum resistance between drain and source): 7.3mOhm @ 40A and 10V
  • Gate threshold voltage (Vgs(th)): 2.5V @ 1mA
  • Power Dissipation: 1.5W @ ambient temperature (Ta) and 84W @ case temperature (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-263-3, D²Pak
  • Supplier Device Package: TO-263 and TO-220SMD
  • Gate Charge (Qg): 50nC @ 10V
  • Input Capacitance (Ciss): 2800pF @ 10V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: Up to 150°C
  • Manufacturer: Renesas Electronics America

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