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Same model may have multiple batches, images only for reference.
SPI15N65C3HKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPI15N65C3HKSA1

Part No SPI15N65C3HKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SPI15N65C3HKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number SPI15N
Other Names SP000294825
Standard Package 500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278325-SPI15N65C3HKSA1
Ultra Librarian 3D Model Ultra Librarian SPI15N65C3HKSA1 CAD Model

Description

The Infineon Technologies SPI15N65C3HKSA1 is an N-channel MOSFET transistor that is designed for use in high-power applications.

  • Maximum Drain-Source Voltage: 650V
  • Maximum Continuous Drain Current: 15A
  • Benefits: Excellent performance and low cost
  • Package: Through hole TO-262-3 Long Leads

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