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NSBC114EPDP6T5G

Part No NSBC114EPDP6T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP 50V SOT963
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 13 Weeks
Features Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA - 339mW Surface Mount SOT-963
Manufacturer ON Semiconductor
Package Reel - TR
Mounting Surface Mount
Package SOT-963
Case / Package SOT-963
Family Name NSBC114
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Part Number NSBC114EPDP6T5GOSTR, NSBC114EPDP6T5GOSDKR, NSBC114EPDP6T5GOSCT, NSBC114EPDP6T5G-ND
Quantity per package 8000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 929379-NSBC114EPDP6T5G
Ultra Librarian 3D Model Ultra Librarian NSBC114EPDP6T5G CAD Model

Description

ON Semiconductor NSBC114EPDP6T5G Bipolar Transistor

The ON Semiconductor NSBC114EPDP6T5G is a high-performance NPN bipolar (BJT) single transistor designed for use in a variety of electronic applications where efficient amplification and switching are required. This component is a testament to ON Semiconductor's commitment to providing innovative and reliable semiconductor solutions that meet the evolving needs of the industry.

The NSBC114EPDP6T5G offers an impressive collector-emitter voltage (VCEO) of 50V, coupled with a collector current (IC) capability of 100mA, making it suitable for moderate power applications. Its gain bandwidth product (fT) is 250MHz, which ensures that the transistor can handle high-frequency signals with ease, making it an ideal choice for RF and high-speed switching applications.

One of the key features of this transistor is its low collector-emitter saturation voltage (VCE(sat)), which enhances its efficiency by reducing power loss during operation. This property makes the NSBC114EPDP6T5G an energy-efficient choice for designers looking to optimize their circuit's power consumption.

The NSBC114EPDP6T5G comes in a compact SOT-563 surface-mount package, which is perfect for space-constrained applications. Its small footprint allows for high-density PCB layouts, enabling designers to maximize functionality in minimal space. This packaging also provides for improved thermal performance, ensuring the device operates within its specified temperature range even under high-power conditions.

With its robust construction, the NSBC114EPDP6T5G is designed to withstand the rigors of industrial environments, offering high reliability and a long operational lifespan. It is characterized by a low noise figure, which is crucial for applications that demand high signal integrity, such as audio amplifiers and communication systems.

In summary, the ON Semiconductor NSBC114EPDP6T5G is a versatile NPN bipolar transistor that offers a balance of high-speed performance, power efficiency, and compact packaging. Its technical specifications make it suitable for a wide range of applications, including but not limited to, signal amplification, switching, and power management in consumer electronics, automotive systems, and industrial equipment.

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Pricing & Ordering

Quantity Unit Price Ext. Price
755+ $0.0768 $57.9840
1,835+ $0.0631 $115.7885
2,840+ $0.0611 $173.5240
3,910+ $0.0591 $231.0810
5,055+ $0.0572 $289.1460
6,760+ $0.0513 $346.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,040 pieces
MOQ: 755 pcs
Order Increment : 1 pcs
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