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NTB5405NG

Part No NTB5405NG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 116A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 88nC @ 10V
Max Input Capacitance 4000pF @ 32V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083702-NTB5405NG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB5405NG CAD Model

Description

Introducing the NTB5405NG Power MOSFET by ON Semiconductor

The NTB5405NG is a state-of-the-art power MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management. This high-performance component is designed for a multitude of applications requiring efficient power management, including computing, automotive, consumer, and industrial sectors.

At the heart of the NTB5405NG is ON Semiconductor's advanced technology that provides a perfect blend of low on-resistance and high switching performance. This enables the MOSFET to handle high levels of current without significant losses, making it an optimal choice for power-intensive applications. With a 55V rating, this device is capable of sustaining moderate voltage levels while delivering exceptional performance.

The NTB5405NG comes in a TO-220 package, which is widely known for its robustness and excellent thermal performance. The package is designed to offer superior heat dissipation, ensuring that the MOSFET operates within its temperature specifications even under high-current scenarios. This feature is critical for maintaining the longevity and reliability of both the MOSFET and the overall system in which it is deployed.

Key features of the NTB5405NG include:

  • Low on-resistance (R<sub>DS(on)) which reduces conduction losses and improves overall efficiency.
  • High switching speeds which are essential for reducing switching losses in PWM applications.
  • Robust thermal characteristics that allow for better management of thermal stress and enhance system reliability.
  • Gate charge optimized to achieve efficient switching at low gate voltages, thus reducing the power required to drive the MOSFET.

ON Semiconductor's commitment to quality ensures that the NTB5405NG not only meets industry standards but also surpasses them in terms of performance and reliability. Whether you're designing power supplies, motor controllers, or any other application that demands high-efficiency power conversion, the NTB5405NG is an excellent choice that combines cutting-edge technology with ON Semiconductor's legacy of innovation and reliability.

Choose the NTB5405NG for your next project, and experience the difference that ON Semiconductor's products can make in optimizing your power management solutions.

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