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NTB75N06LG

Part No NTB75N06LG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 92nC @ 5V
Max Input Capacitance 4370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 214W (Tj)
Maximum Rds On at Id,Vgs 11 mOhm @ 37.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083725-NTB75N06LG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB75N06LG CAD Model

Description

ON Semiconductor NTB75N06LG MOSFET Overview

The NTB75N06LG from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of a variety of applications. This device boasts an impressive 60V, 75A rating, making it suitable for high current and high voltage operations. The NTB75N06LG is part of ON Semiconductor's Trench Power MOSFETs, which are known for their low on-resistance and high switching performance.

With its TO-220 package, the NTB75N06LG ensures efficient thermal management and ease of integration into a wide range of circuit designs. This package is widely accepted in the industry and is known for its reliability and robustness, making it a preferred choice for designers and engineers.

Key Features of NTB75N06LG

  • High Current Capability: The device can handle continuous drain currents up to 75A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical R<sub>DS(on) value of just 8.4 mΩ, the NTB75N06LG ensures minimal power loss and improved efficiency in your circuit.
  • High Voltage Tolerance: It can withstand drain-to-source voltages up to 60V, providing a good safety margin for transient conditions.
  • Fast Switching Speed: The MOSFET is designed for fast switching applications, reducing switching losses and improving performance.
  • Robust Thermal Performance: The TO-220 package is known for its excellent heat dissipation capabilities, which is crucial for maintaining performance and longevity under high-power conditions.
  • Logic Level Gate Drive: It can be driven by logic-level voltages, making it compatible with modern microcontrollers and digital circuits.

The NTB75N06LG is a versatile component that can be used in a variety of applications, including DC-DC converters, motor drives, power management systems, and more. Its combination of high current capability, low on-resistance, and fast switching speed make it an excellent choice for designers looking to optimize their power designs for efficiency and performance.

ON Semiconductor's commitment to quality and performance is evident in the NTB75N06LG MOSFET. Whether you're working on a new design or looking to upgrade an existing one, this MOSFET is a reliable and powerful solution that will help you achieve your design goals.

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