The NTD4302T4G from ON Semiconductor is a high-performance, Power MOSFET designed to meet a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing innovative power management solutions that enhance energy efficiency and reliability in electronic systems.
Key Features
- Low RDS(on): The NTD4302T4G boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
- High Current Capacity: With the ability to handle a continuous drain current of up to 30 A, this MOSFET can support demanding power requirements.
- Optimized Gate Charge: The optimized gate charge ensures fast switching performance, making it suitable for high-frequency applications.
- Robust Thermal Performance: The device is encapsulated in a compact, surface-mount package that enhances thermal performance, ensuring reliability under varying operating conditions.
Applications
The versatility of the NTD4302T4G allows it to be used in a diverse array of applications, including:
- DC/DC Converters
- Power Supply Modules
- Motor Drives
- Battery Management Systems
- Automotive Applications
Quality and Environmental Compliance
ON Semiconductor ensures that the NTD4302T4G not only meets industry standards for quality but also complies with environmental regulations. The device is Pb-free, Halogen-free, and RoHS compliant, reflecting the company's dedication to environmental sustainability.
Technical Specifications
Parameter |
Value |
VDS (Drain-Source Voltage) |
30 V |
ID (Continuous Drain Current) |
30 A |
RDS(on) (On-Resistance) |
7.5 mΩ |
Package |
IPAK (TO-251) |
For engineers and designers looking for a robust and efficient power management solution, the NTD4302T4G offers an exceptional combination of performance, reliability, and environmental consciousness.