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NTD4804N-1G

Part No NTD4804N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14.5A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14.5A (Ta), 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 40nC @ 4.5V
Max Input Capacitance 4490pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.43W (Ta), 107W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083791-NTD4804N-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4804N-1G CAD Model

Description

Product Overview: NTD4804N-1G from ON Semiconductor

The NTD4804N-1G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor. This MOSFET is a robust and efficient solution for a wide array of applications that require power switching and amplification, including but not limited to, power management, motor control, and DC-DC conversion systems.

Key Features

  • Low On-Resistance: The NTD4804N-1G boasts an exceptionally low on-resistance (R<sub>DS(on)), which results in minimal conduction losses and higher efficiency in electronic circuits.
  • High Current Capacity: This MOSFET can handle continuous drain currents up to 33A, making it suitable for high-power applications.
  • High Voltage Threshold: With a drain-to-source voltage (V<sub>DSS) of 30V, the device can be used in systems that require a moderate voltage level.
  • Fast Switching Speed: The fast switching characteristics of the NTD4804N-1G contribute to reduced switching losses and improved performance in high-frequency applications.
  • Low Gate Charge: A low total gate charge (Q<sub>g) ensures that the device can be driven at lower voltages, which helps in reducing power consumption.

Applications

The versatility of the NTD4804N-1G MOSFET makes it suitable for a variety of applications, including:

  • DC/DC converters
  • Power supply modules
  • Motor drives
  • Automotive applications
  • Switching regulators
  • Power management in portable devices

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the NTD4804N-1G is no exception. It is designed to meet the rigorous standards of the industry, ensuring long-term reliability and performance. The device is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Package and Availability

The NTD4804N-1G is available in a TO-252 (DPAK) package, which is widely used and suitable for automated assembly processes. Its compact form factor and surface-mount design make it an ideal choice for space-constrained applications. For detailed specifications and purchasing options, customers should refer to ON Semiconductor's official product datasheet and distribution channels.

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