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NTD4858N-1G

Part No NTD4858N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 11.2A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 19.2nC @ 4.5V
Max Input Capacitance 1563pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 54.5W (Tc)
Maximum Rds On at Id,Vgs 6.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 209339-NTD4858N-1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD4858N-1G CAD Model

Description

ON Semiconductor NTD4858N-1G N-Channel Power MOSFET

The NTD4858N-1G from ON Semiconductor is a high-performance N-Channel Power MOSFET designed for a wide range of applications, from power management to load switching. Its advanced technology ensures efficient power handling and control, making it an ideal choice for designers looking to optimize their power systems.

This MOSFET features a robust and durable design, with a 30V drain-to-source voltage (Vds) and a continuous drain current (Id) of 11A at 25°C. This allows for the handling of high currents without compromising on the device's longevity or reliability. The device's low on-resistance, typically 8.7 mOhms at 10V, ensures minimal power loss and heat generation, enhancing overall system efficiency.

The NTD4858N-1G is housed in a compact, surface-mountable package, specifically the TO-252 (DPAK) form factor, which is well-suited for space-constrained applications. This package also provides excellent thermal performance, ensuring that the device remains cool even under heavy loads.

With its fast switching speed and gate charge characteristics, the NTD4858N-1G is optimized for high-frequency operation, making it suitable for use in switch mode power supplies (SMPS), DC-DC converters, and other power conversion applications. Additionally, it features a low threshold voltage, which facilitates easy drive and low voltage operation, further expanding its usability in low power applications.

The device is also characterized by its ruggedness, with a 100% avalanche tested design that guarantees reliable operation even under the most demanding conditions. It also incorporates built-in protection features, such as a self-limiting diode, to protect against excessive voltage and current, ensuring the safety and durability of both the MOSFET and the overall system.

In summary, the NTD4858N-1G from ON Semiconductor is a versatile and efficient solution for power management and load switching applications. Its combination of low on-resistance, high current handling, fast switching speeds, and compact packaging makes it an excellent choice for designers seeking to enhance the performance and reliability of their power systems.

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