ON Semiconductor NTD4805N-1G N-Channel Power MOSFET

The NTD4805N-1G is a high-performance N-Channel Power MOSFET from ON Semiconductor, designed for a wide range of applications that require efficient power management and high current handling capabilities. This MOSFET is part of ON Semiconductor's Power MOSFET portfolio, which is known for its reliability, efficiency, and performance.

Key Features

• Low On-Resistance: The NTD4805N-1G features a low on-resistance of just 7.8 mΩ at V<sub>GS = 10V, which translates to reduced conduction losses and improved overall efficiency in applications.
• High Continuous Drain Current: With a continuous drain current (I<sub>D) of 48A, this MOSFET can handle high current loads, making it suitable for power-intensive applications.
• High Maximum Junction Temperature: The device can operate at a maximum junction temperature (T<sub>J) of 175°C, allowing for performance stability in high-temperature environments.
• Low Gate Charge: The low gate charge (Q<sub>G) ensures faster switching performance, which is critical for high-speed applications.
• Robust Body Diode: The NTD4805N-1G includes a robust and fast body diode, which provides efficient reverse recovery performance, crucial for applications with inductive loads.

Applications

The NTD4805N-1G is suitable for a variety of applications, including:

• DC/DC Converters
• Motor Drives
• Power Management Systems
• Automotive Applications
• Switching Regulators
• Synchronous Rectification

Package and Quality

The NTD4805N-1G is available in a TO-252 (DPAK) package, which is designed for compact and high-density power applications. ON Semiconductor's commitment to quality ensures that each MOSFET meets rigorous standards for performance and reliability.

With its high current handling, low on-resistance, and fast switching capabilities, the NTD4805N-1G is an excellent choice for designers looking to optimize their power systems for efficiency and performance.