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NTD4806N-35G

Part No NTD4806N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2142pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 68W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 060602-NTD4806N-35G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4806N-35G CAD Model

Description

The ON Semiconductor NTD4806N-35G is a high-performance N-Channel Power MOSFET designed to handle high-power and high-efficiency applications with ease. This MOSFET is an ideal choice for a range of electronic applications, including power management, switching regulators, and motor control circuits.

Key Features

  • Low On-Resistance: The NTD4806N-35G boasts an exceptionally low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency in power conversion applications.
  • High Current Capability: With a continuous drain current (I<sub>D) of 30A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
  • High Performance: The device offers fast switching speeds, which is essential for reducing switching losses in high-frequency operations.
  • Robust Thermal Management: The NTD4806N-35G comes in a TO-252 (DPAK) package, which provides excellent thermal performance and helps in maintaining device reliability under high-power conditions.
  • Gate Charge Optimization: The optimized gate charge (Q<sub>G) of the device allows for reduced switching energy, contributing to the efficiency of the system.

Applications

The ON Semiconductor NTD4806N-35G is versatile and can be used in a wide array of applications, including:

  • DC/DC converters
  • Power supply units
  • Motor drives
  • Automotive applications
  • Switching regulators
  • Power management solutions

Quality and Reliability

ON Semiconductor is renowned for its commitment to quality, and the NTD4806N-35G is no exception. It is designed to meet stringent quality standards, ensuring reliable performance in a variety of settings. The robustness of this MOSFET ensures long-term stability and durability, making it a trustworthy component for any power management system.

Whether you are designing a new power system or upgrading an existing one, the NTD4806N-35G from ON Semiconductor provides the efficiency, reliability, and performance required for today's energy-conscious electronic designs.

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