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NTD4815NHT4G

Part No NTD4815NHT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 6.8nC @ 4.5V
Max Input Capacitance 845pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.26W (Ta), 32.6W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083803-NTD4815NHT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4815NHT4G CAD Model

Description

ON Semiconductor NTD4815NHT4G - Power MOSFET

The NTD4815NHT4G from ON Semiconductor is a high-performance Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This device is part of ON Semiconductor's extensive NTD series, known for their reliability and efficiency in power handling capabilities.

This Power MOSFET is built using advanced Trench technology, which allows for lower on-resistance and reduced gate charge, leading to superior switching performance. The NTD4815NHT4G offers a drain-to-source voltage (V<sub>DSS) of 30V, making it suitable for a variety of low-voltage applications such as DC/DC converters, motor drives, and other power switching tasks.

Key features of the NTD4815NHT4G include a continuous drain current (I<sub>D) of 48A, which allows for high current handling capacity. The device also has a low threshold voltage (V<sub>GS(th)), ensuring that it can be driven at lower gate voltages, which is beneficial for battery-operated devices where power efficiency is critical.

The power MOSFET comes in a compact and robust surface-mount package, specifically the DPAK (TO-252) variant, which is designed for efficient thermal management and space-saving on printed circuit boards (PCBs). This makes the NTD4815NHT4G an excellent choice for applications where PCB real estate is at a premium.

With a maximum operating temperature range of -55°C to 175°C, the NTD4815NHT4G is capable of withstanding harsh operating conditions, ensuring reliable performance in a variety of environments. Furthermore, the device is RoHS compliant, adhering to environmental standards that limit the use of hazardous substances in electronic components.

Overall, the ON Semiconductor NTD4815NHT4G is a versatile and efficient Power MOSFET that offers designers a balance of high performance, thermal efficiency, and compact packaging, making it an ideal choice for power management solutions across multiple industries.

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