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NTD4860N-1G

Part No NTD4860N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 10.4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 10.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16.5nC @ 4.5V
Max Input Capacitance 1308pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083809-NTD4860N-1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals, Motor Drive & Control, LED Lighting
Ultra Librarian 3D Model Ultra Librarian NTD4860N-1G CAD Model

Description

ON Semiconductor NTD4860N-1G N-Channel Power MOSFET

The ON Semiconductor NTD4860N-1G is a high-performance N-Channel Power MOSFET designed to meet a wide range of applications that demand high efficiency and reliability. This versatile MOSFET features a robust and energy-efficient design, making it an ideal choice for power management tasks in both consumer and industrial electronics.

Constructed with advanced technology for optimal performance, the NTD4860N-1G boasts a low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses. This characteristic, combined with fast switching speeds, enhances the overall efficiency of systems where this MOSFET is implemented.

The device comes in a compact surface-mount package, specifically the DPAK (TO-252), which is not only space-saving but also allows for excellent thermal conduction away from the silicon chip inside, ensuring stable operation even under high current conditions. This packaging is suitable for automated assembly processes, providing ease of integration into various circuit designs.

Key features of the NTD4860N-1G include:

  • Drain-source voltage (V<sub>DSS) of 30V, which provides a good margin for typical 12V and 24V systems.
  • Continuous drain current (I<sub>D) of up to 24A at 25°C, enabling the device to handle significant power without overheating.
  • Power dissipation (P<sub>D) of 48W, which allows the MOSFET to sustain moderate power levels.
  • Low gate threshold voltage (V<sub>GS(th)), which ensures that the MOSFET can be driven at lower voltages, making it compatible with logic-level circuits.

Applications for the NTD4860N-1G are diverse and include power supplies, DC-DC converters, motor control circuits, and load switches, among others. Its reliability and efficiency also make it suitable for battery management and protection circuits in portable devices.

Whether you're designing a sophisticated industrial control system or a compact consumer electronic device, the ON Semiconductor NTD4860N-1G offers the performance and quality needed to ensure your applications run smoothly and efficiently.

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