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NTD4959NT4G

Part No NTD4959NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A TP-FA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 11.5V
Max Input Capacitance 1456pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 041968-NTD4959NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4959NT4G CAD Model

Description

ON Semiconductor NTD4959NT4G Power MOSFET

The ON Semiconductor NTD4959NT4G is a high-performance Power MOSFET designed to meet the requirements of modern electronic circuits. This device is particularly suitable for applications that require efficient power management and high-speed switching. With its robust construction and optimized design, the NTD4959NT4G is an excellent choice for power regulation tasks in a wide range of electronic devices.

This Power MOSFET is part of ON Semiconductor's portfolio of energy-efficient components, which are engineered to reduce power consumption and increase the reliability of electronic systems. The NTD4959NT4G features a drain-to-source voltage (V<sub>DS) of 30V, a continuous drain current (I<sub>D) of 17.2A, and a power dissipation of 2.5W, making it capable of handling moderate power levels in compact form factors.

The device comes in a surface-mount package, specifically the DPAK (TO-252) variant, which is known for its small footprint and ease of integration into various circuit designs. This package is also beneficial for applications where space is at a premium, without compromising on thermal and electrical performance.

One of the key features of the NTD4959NT4G is its low on-resistance (R<sub>DS(on)), which contributes to its high efficiency by minimizing conduction losses. The MOSFET also boasts fast switching speeds, which are critical for reducing switching losses and improving overall system efficiency. These characteristics make it an ideal choice for power supply circuits, DC-DC converters, motor control applications, and other power-intensive operations.

The NTD4959NT4G is designed to be rugged and reliable, with built-in protection features such as a maximum junction temperature of 175°C and an ESD rating that ensures the device's resilience against electrostatic discharge events. ON Semiconductor's commitment to quality means that this MOSFET is manufactured to the highest standards, providing designers with confidence in its performance and longevity.

Overall, the ON Semiconductor NTD4959NT4G Power MOSFET is a versatile and efficient solution for modern electronic applications requiring high-speed switching and effective power management.

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