The NTD5802NT4G from ON Semiconductor is a high-performance N-Channel Power MOSFET designed for a variety of applications that demand high-efficiency power control and conversion. This device is a perfect choice for engineers looking to improve system power density, reliability, and efficiency in their designs.

Key Features

• High Current Capability: The NTD5802NT4G is capable of handling continuous drain currents up to 42 A, making it suitable for high current applications.
• Low On-Resistance: With a typical R_DS(on) value of just 8 mΩ at V_GS = 10 V, this MOSFET ensures minimal power loss and heat generation during operation.
• High Temperature Performance: It can operate effectively over a wide temperature range, with a maximum junction temperature of 175°C, ensuring reliability in harsh environments.
• Fast Switching Speed: The device offers fast switching performance, which is critical for reducing switching losses in power conversion systems.

Applications

• DC/DC Converters
• Power Supply Modules
• Motor Drives
• Automotive Applications
• Switch Mode Power Supplies (SMPS)
• Power Management Functions

Product Specifications

The NTD5802NT4G is available in a TO-252 (DPAK) package, which is designed for surface mount technology and is widely used in compact electronic assemblies. With its robust design and advanced technology, the NTD5802NT4G is an excellent choice for designers who require a reliable and efficient power MOSFET for their next project.