The NTD5C632NLT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management. Designed with advanced technology, this MOSFET is an ideal component for a wide range of power applications where efficiency and reliability are paramount.

Key Features

• Low R<sub>DS(on): This device features a low on-resistance, which translates into less power loss and improved efficiency when the MOSFET is in the 'on' state, making it suitable for high-efficiency power management designs.
• High Current Capability: With its ability to handle a continuous drain current of up to 63A, the NTD5C632NLT4G is capable of supporting high current applications, ensuring robust performance for heavy-duty operations.
• High Performance: The device is engineered to deliver high performance with fast switching speeds, which is critical for reducing switching losses in power conversion systems.
• Enhanced Thermal Performance: It comes in a compact package that provides excellent thermal performance, ensuring reliability and longevity even under high temperature operating conditions.

Applications

The NTD5C632NLT4G is versatile and can be used in various applications including:

• DC/DC Converters
• Power Supply Units (PSUs)
• Motor Drives
• Automotive Applications
• Switching Regulators
• Power Management Solutions

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30 V Continuous Drain Current (I<sub>D) 63 A Power Dissipation (P<sub>D) 48 W R<sub>DS(on) 8.8 mΩ Package TO-252 (DPAK)

With its robust design, the NTD5C632NLT4G from ON Semiconductor stands as a reliable and efficient solution for designers looking to improve power density and performance in their applications.