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NTDV20P06LT4G-VF01

Part No NTDV20P06LT4G-VF01
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description PFET DPAK 60V 15.5A 130R  /  P-Channel 60 V 15.5A (Tc) 65W (Tc) Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 150mOhm @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V
Power Dissipation (Max) 65W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NTDV20P06LT4G-VF01TR,488-NTDV20P06LT4G-VF01DKR,488-NTDV20P06LT4G-VF01CT
Standard Package 2,500
Win Source Part Number 1018474-NTDV20P06LT4G-VF01
Ultra Librarian 3D Model Ultra Librarian NTDV20P06LT4G-VF01 CAD Model

Description

ON Semiconductor NTDV20P06LT4G-VF01 Power MOSFET

The ON Semiconductor NTDV20P06LT4G-VF01 is a high-performance Power MOSFET designed to meet the rigorous demands of various power management applications. This device is a P-Channel MOSFET that features a drain-to-source voltage (V<sub>DS) of -60V and a continuous drain current (I<sub>D) of -20A, making it ideal for high-side switching applications. It is housed in a compact and efficient DPAK (TO-252) package, ensuring a minimal footprint on the PCB while providing excellent thermal performance.

One of the key attributes of the NTDV20P06LT4G-VF01 is its low on-resistance (R<sub>DS(on)), which is typically just 48mΩ at a gate drive of -10V. This low R<sub>DS(on) translates into reduced conduction losses, improving overall efficiency in power conversion applications. The device also boasts a low threshold voltage, which enhances its performance in low-voltage drive systems and makes it suitable for logic-level gate drive circuits.

The MOSFET is designed with advanced trench technology, which not only minimizes on-resistance but also provides superior switching performance. This technology, combined with the device's robust maximum junction temperature of 175°C, ensures reliable operation even under stressful conditions. The NTDV20P06LT4G-VF01 is also characterized by its fast switching speed, further contributing to the efficiency of the power management system it is integrated into.

ON Semiconductor has equipped the NTDV20P06LT4G-VF01 with various protective features to ensure device longevity and system reliability. It includes an integrated diode for body-drain protection and is compliant with the rigorous standards for Electrostatic Discharge (ESD) protection. These features make the MOSFET an excellent choice for automotive applications, DC/DC converters, power supply modules, and other power-intensive electronic systems.

With its combination of high performance, efficiency, and reliability, the NTDV20P06LT4G-VF01 from ON Semiconductor is an exemplary solution for designers looking to optimize their power management strategies in a variety of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8350 $58.4500
170+ $0.6851 $116.4670
265+ $0.6638 $175.9070
360+ $0.6423 $231.2280
470+ $0.6209 $291.8230
625+ $0.5567 $347.9375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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