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NTE4153NT1G

Part No NTE4153NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 915MA SC-89
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 1.82nC @ 4.5V
Max Input Capacitance 110pF @ 16V
Maximum Gate-Source Voltage ±6V
Power Dissipation (Max) 300mW (Tj)
Maximum Rds On at Id,Vgs 230 mOhm @ 600mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-3
Dimension SC-89, SOT-490
Win Source Part Number 004203-NTE4153NT1G
Family Name NTE4153N
Introduction Date March 29, 2012
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management, Consumer Electronics, Computers & Computer Peripherals, Industrial
Ultra Librarian 3D Model Ultra Librarian NTE4153NT1G CAD Model

Description

ON Semiconductor NTE4153NT1G: A High-Performance ESD Protection Diode

The NTE4153NT1G from ON Semiconductor is a cutting-edge ESD (Electrostatic Discharge) protection diode designed to safeguard voltage-sensitive components from electrical damage. This compact and efficient component is essential for modern electronic applications where high-speed data lines and sensitive circuitry are prevalent.

Key Features

  • Low Capacitance: The NTE4153NT1G features ultra-low capacitance, typically around 0.5 pF, which is ideal for protecting high-speed data lines without compromising signal integrity.
  • ESD Protection: It offers superb ESD protection, meeting the IEC61000-4-2 standard, and can withstand ESD strikes of ±20 kV (air discharge) and ±15 kV (contact discharge), ensuring the safety of the protected component.
  • Low Clamping Voltage: The device provides a low clamping voltage, which minimizes the stress on the protected component during an ESD event.
  • Fast Response Time: With an extremely fast response time to ESD strikes, this diode ensures immediate protection for sensitive circuits.
  • Small Footprint: The NTE4153NT1G comes in a small SOD-523 package, making it suitable for space-constrained applications.

Applications

  • High-speed data lines (USB, HDMI, Thunderbolt)
  • Wireless communication systems
  • Portable electronics
  • Computer peripherals
  • Consumer electronics

The NTE4153NT1G is not just limited to protecting against ESD; its low leakage current and low operating voltage make it an excellent choice for battery-powered devices where power efficiency is critical. Its robust design ensures that it can be used in a wide range of industrial and consumer applications where durability and reliability are key.

ON Semiconductor's commitment to quality is evident in the NTE4153NT1G, which is manufactured to high standards to ensure consistent performance and longevity. Whether you're designing a smartphone, a laptop, or an industrial control system, the NTE4153NT1G is an excellent choice for keeping your circuits safe from the unexpected dangers of electrostatic discharge.

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Pricing & Ordering

Quantity Unit Price Ext. Price
390+ $0.1298 $50.6220
825+ $0.1215 $100.2375
1,280+ $0.1174 $150.2720
1,835+ $0.1092 $200.3820
2,380+ $0.1051 $250.1380
2,975+ $0.1010 $300.4750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 86,855 pieces
MOQ: 390 pcs
Order Increment : 1 pcs
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