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NTGS5120PT1G

Part No NTGS5120PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 60V 2.5A 6-Pin TSOP T/R / MOSFET P-CH 60V 1.8A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 18.1nC @ 10V
Max Input Capacitance 942pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 111 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 025763-NTGS5120PT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTGS5120P
Introduction Date June 18, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTGS5120PT1G CAD Model

Description

ON Semiconductor NTGS5120PT1G - Power MOSFET

The ON Semiconductor NTGS5120PT1G is a high-performance Power MOSFET that is designed to meet a wide range of application requirements. This MOSFET is part of ON Semiconductor's energy-efficient portfolio and is characterized by its low on-resistance and high switching speed, making it an ideal choice for power management tasks in modern electronic devices.

Key Features

  • Low RDS(on): The NTGS5120PT1G boasts a low on-state resistance, which minimizes conduction losses and improves overall efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can operate efficiently at high frequencies, which is essential for reducing switching losses in power conversion systems.
  • Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTGS5120PT1G provides superior performance compared to traditional planar MOSFETs.
  • Thermal Management: The device is housed in a compact SOT-23 package, which is known for its excellent thermal characteristics, ensuring the MOSFET operates within safe temperature ranges even under high current conditions.
  • Voltage Rating: It has a drain-to-source voltage (VDSS) of 20V, making it suitable for a variety of low to medium voltage applications.
  • RoHS Compliant: The NTGS5120PT1G is compliant with RoHS standards, ensuring that it is free from hazardous substances and suitable for use in environmentally sensitive products.

Applications

The ON Semiconductor NTGS5120PT1G is versatile and can be used in a range of applications, including:

  • DC/DC Converters
  • Battery Management Systems
  • Load Switches
  • Power Supply Circuits
  • Motor Control

With its combination of low power dissipation, high efficiency, and fast switching, the NTGS5120PT1G is a reliable choice for designers looking to optimize their power management systems. Whether it's for consumer electronics, automotive, or industrial applications, this Power MOSFET from ON Semiconductor is engineered to deliver top-notch performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4150 $56.6000
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 78,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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