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NTHD2102PT1

Part No NTHD2102PT1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 3.4A CHIPFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 58 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 16nC @ 2.5V
Max Input Capacitance 715pF @ 6.4V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 104729-NTHD2102PT1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTHD2102PT1 CAD Model

Description

The NTHD2102PT1 is a high-performance, dual P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is an ideal component for a wide range of power management applications where high efficiency and compact design are required.

This Power MOSFET features two independent P-Channel transistors in a single package, providing a space-efficient solution for complex circuit designs. With an emphasis on reducing power loss and improving system reliability, the NTHD2102PT1 offers excellent thermal performance and low on-resistance, which is crucial for high-efficiency power conversion.

Key Features:

  • Low On-Resistance: The device boasts a low on-resistance, which translates to reduced conduction losses and improved power efficiency.
  • Dual P-Channel Configuration: Integrating two P-Channel MOSFETs in a single package allows for compact designs and simplified PCB layout.
  • High-Speed Switching: Fast switching capabilities make the NTHD2102PT1 suitable for high-frequency applications, enhancing overall system performance.
  • Thermal Performance: The MOSFET is designed to handle significant power levels while maintaining a low thermal footprint, aiding in system longevity.
  • ESD Protection: Built-in Electrostatic Discharge (ESD) protection safeguards the device from unexpected voltage spikes during handling and operation.

Applications:

The versatility of the NTHD2102PT1 makes it an excellent choice for a variety of applications, including:

  • Power Management Circuits
  • Load Switching
  • Battery Management Systems
  • DC/DC Converters
  • Portable Devices

ON Semiconductor's commitment to quality ensures that the NTHD2102PT1 meets the stringent requirements of modern electronic systems. Whether it's for consumer electronics, automotive applications, or industrial systems, this dual P-Channel Power MOSFET stands as a reliable and efficient solution for your power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3621 $57.9360
390+ $0.2972 $115.9080
605+ $0.2878 $174.1190
830+ $0.2786 $231.2380
1,075+ $0.2693 $289.4975
1,440+ $0.2414 $347.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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