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NTHD3133PFT1G

Part No NTHD3133PFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.2A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 7.4nC @ 4.5V
Max Input Capacitance 680pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 3.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 060641-NTHD3133PFT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Portable Devices
Ultra Librarian 3D Model Ultra Librarian NTHD3133PFT1G CAD Model

Description

ON Semiconductor NTHD3133PFT1G P-Channel Power MOSFET

The ON Semiconductor NTHD3133PFT1G is a high-performance, P-Channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This compact and robust component is an ideal choice for engineers looking to enhance their designs with reliable and efficient power control.

Featuring advanced trench technology, the NTHD3133PFT1G offers a low on-resistance (R<sub>DS(on)), which results in reduced conduction losses and improved overall efficiency. This characteristic is particularly important for applications where power conservation is critical, such as portable and battery-powered devices.

The device operates at a standard threshold voltage, ensuring compatibility with existing circuit designs and logic levels. It is capable of handling a continuous drain current (I<sub>D) at 25°C, making it suitable for moderate to high current applications. Additionally, the NTHD3133PFT1G can sustain a high drain-source voltage (V<sub>DSS), providing a wide safety margin for various electronic designs.

With its low gate charge (Q<sub>G), the NTHD3133PFT1G allows for fast switching speeds, which is beneficial for high-frequency power conversion and regulation circuits. This feature also contributes to lower switching losses, further enhancing the efficiency of the device.

The NTHD3133PFT1G comes in a small, surface-mount package, making it an excellent choice for space-constrained applications. It is also RoHS compliant, ensuring that it meets the latest environmental standards and regulations.

ON Semiconductor has designed the NTHD3133PFT1G with reliability in mind. It is built to withstand harsh operating conditions and provides built-in protection features such as thermal shutdown and overcurrent protection. These attributes make the NTHD3133PFT1G a reliable component for power management solutions in industrial, automotive, telecommunications, and consumer electronics markets.

In summary, the NTHD3133PFT1G from ON Semiconductor is a versatile and efficient P-Channel Power MOSFET that offers low on-resistance, fast switching speeds, and robust protection features, all packed in a small footprint suitable for a variety of power-sensitive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5228 $59.8876
40+ $2.8910 $115.6400
62+ $2.8009 $173.6558
86+ $2.7096 $233.0256
111+ $2.6195 $290.7645
148+ $2.3493 $347.6964
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Availability: 7,390 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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