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NTHL019N65S3H

Part No NTHL019N65S3H
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 75A TO247-3 / N-Channel 650 V 75A (Tc) 625W (Tc) Through Hole TO-247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series SuperFET® III
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 19.3mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 4V @ 14.3mA
Gate Charge (Qg) (Max) @ Vgs 282 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 15993 pF @ 400 V
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number NTHL019
Standard Package 30
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1339897-NTHL019N65S3H
Ultra Librarian 3D Model Ultra Librarian NTHL019N65S3H CAD Model

Description

ON Semiconductor NTHL019N65S3H: Silicon Carbide MOSFET

The ON Semiconductor NTHL019N65S3H is a high-performance, Silicon Carbide (SiC) MOSFET that is designed to meet the demanding requirements of power systems in various applications. This device offers superior efficiency, faster switching speeds, and higher temperature operation compared to traditional silicon MOSFETs.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, making it ideal for power supply and conversion systems.
  • Low On-Resistance: The NTHL019N65S3H boasts an ultra-low on-resistance (R<sub>DS(on)) of just 19 mΩ at V<sub>GS = 18V. This minimizes power loss and improves overall efficiency.
  • Fast Switching Speed: SiC technology enables faster switching speeds, which reduces switching losses and allows for higher frequency operation, leading to smaller and more efficient power converters.
  • High-Temperature Operation: This MOSFET is capable of operating at junction temperatures up to 150°C, ensuring reliability and performance even under thermal stress.
  • Low Gate Charge: The device has a low total gate charge (Q<sub>G), which reduces the energy required to turn the MOSFET on and off, further enhancing its efficiency.

Applications

The NTHL019N65S3H is suitable for a wide range of applications, including:

  • Electric vehicle (EV) chargers
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • High-efficiency power supplies
  • Energy storage systems
  • Induction heating

ON Semiconductor's NTHL019N65S3H SiC MOSFET is a cutting-edge solution for designers looking to improve power density, efficiency, and performance in their power conversion systems. Its robust design and advanced material properties make it a standout component in the field of power electronics.

Additional Information

For detailed specifications, application notes, and additional resources, please refer to the datasheet and technical documentation available on the ON Semiconductor website. The NTHL019N65S3H is a testament to ON Semiconductor's commitment to providing innovative, energy-efficient semiconductors for the modern power electronics market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $37.8388 $75.6776
4+ $31.0473 $124.1892
5+ $30.0770 $150.3850
7+ $29.1068 $203.7476
9+ $28.1366 $253.2294
12+ $25.2259 $302.7108
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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