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NTJD4158CT1G

Part No NTJD4158CT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 30V/20V 0.25A/0.88A 6-Pin SC-88 T/R / MOSFET N/P-CH 30V/20V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V, 20V
Continuous Drain Current at 25°C 250mA, 880mA
Maximum Rds On at Id,Vgs 1.5 Ohm @ 10mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Gate Charge 1.5nC @ 5V
Max Input Capacitance 33pF @ 5V
Maximum Power Dissipation 270mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 025777-NTJD4158CT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Family Name NTJD4158C
Introduction Date January 12, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian NTJD4158CT1G CAD Model

Description

The NTJD4158CT1G is a high-performance, dual N- and P-Channel Power MOSFET from ON Semiconductor, designed to deliver efficient power management and switching with low on-state resistance. This product is a testament to ON Semiconductor's commitment to providing energy-efficient solutions for a wide array of electronic applications.

Key Features

  • Device Type: Power MOSFET, dual N- and P-Channel
  • Package: Compact 6-Pin TSOP
  • Low On-Resistance: Provides reduced conduction losses and enhances power efficiency
  • Low Threshold Voltage: Ensures low-voltage operation, ideal for battery-powered devices
  • High-Speed Switching: Suitable for high-frequency power switching applications
  • RoHS Compliant: Meets environmental standards, minimizing the ecological footprint

Applications

The NTJD4158CT1G is versatile and can be used in a variety of applications, including:

  • Power management for portable devices
  • DC/DC converters
  • Load switch
  • Battery management systems
  • Motor control circuits

Performance Specifications

Parameter N-Channel P-Channel
Drain-Source Voltage (VDS) 20V -20V
Continuous Drain Current (ID) 3.5A -2.9A
Power Dissipation (PD) 1.25W 1.25W
On-State Resistance (RDS(on)) 0.045Ω 0.07Ω

Quality and Reliability

ON Semiconductor's NTJD4158CT1G is designed with high-quality materials and is subjected to rigorous testing to ensure reliability and performance under various conditions. The device's robust construction ensures long-term stability and operation, making it a reliable choice for critical applications.

With its combination of efficiency, reliability, and compact form factor, the NTJD4158CT1G from ON Semiconductor is an ideal choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2562 $51.2400
480+ $0.2102 $100.8960
740+ $0.2036 $150.6640
1,015+ $0.1971 $200.0565
1,315+ $0.1905 $250.5075
1,760+ $0.1708 $300.6080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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