The NTMD6N04R2G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, offering a combination of low on-resistance and high switching performance, making it an ideal choice for a wide range of power management applications.

Key Features

• Low On-Resistance: The device features a low R<sub>DS(on) which minimizes conduction losses, improving overall energy efficiency in applications.
• High Current Capability: With a continuous drain current (I<sub>D) of up to 6.3 A, the NTMD6N04R2G can handle high current loads, making it suitable for demanding power applications.
• High Switching Performance: Fast switching speeds allow for efficient operation at high frequencies, which is beneficial for switching power supplies and other power conversion applications.
• Thermal Management: The device is housed in a compact and thermally efficient surface mount package, which aids in heat dissipation during operation.
• Robust Design: Built to withstand tough conditions, the NTMD6N04R2G offers a high level of ruggedness, including protection against electrostatic discharge (ESD).

Applications

The NTMD6N04R2G MOSFET is versatile and can be used in a variety of applications, including:

• DC/DC Converters
• Power Supply Load Switches
• Motor Drives
• Battery Management Systems
• Automotive Applications

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 40 V Gate-to-Source Voltage (V<sub>GS) ±20 V Continuous Drain Current (I<sub>D) 6.3 A Power Dissipation (P<sub>D) 2.5 W Operating Temperature Range -55°C to 150°C

With its robust design and high-efficiency operation, the NTMD6N04R2G from ON Semiconductor is an excellent choice for designers looking to improve the performance and reliability of their power management systems.