ON Semiconductor NTMFS4836NT3G Product Overview

The NTMFS4836NT3G is a cutting-edge power MOSFET developed by ON Semiconductor, designed to deliver high efficiency and reliability for a wide range of applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features

• Low On-Resistance: The NTMFS4836NT3G boasts an exceptionally low on-resistance (R_DS(on)), which results in reduced conduction losses and improved overall efficiency.
• High Current Capability: With a continuous drain current (I_D) rating of up to 30 A, this MOSFET can handle high current applications with ease, making it a versatile choice for power management tasks.
• Power Dissipation: It has a power dissipation (P_D) of 48 W, allowing it to manage significant amounts of power without overheating.
• High Performance in Compact Size: The NTMFS4836NT3G comes in a compact 5 mm x 6 mm footprint, providing exceptional performance in a small package, which is crucial for space-constrained applications.
• Environmentally Friendly: This MOSFET is RoHS compliant, ensuring that it meets the latest environmental standards and regulations.

Applications

The NTMFS4836NT3G is suitable for a variety of applications, including:

• DC/DC Converters
• Power Supply for Servers
• Motor Drives
• Power Management in Portable Devices
• Switching Regulators

Technical Specifications

Below are some of the technical specifications of the NTMFS4836NT3G:

• Voltage - Rated: 30 V
• Drive Voltage (Max R_DS(on), Min R_DS(on)): 10 V, 4.5 V
• Gate Charge (Q_g @ V_gs): 14 nC @ 10 V
• Input Capacitance (C_iss): 1150 pF
• Threshold Voltage (V_th): 1.7 V
• Operating Temperature: -55°C to 150°C

With its robust construction, high efficiency, and thermal management capabilities, the NTMFS4836NT3G from ON Semiconductor is an excellent choice for designers looking to optimize their power systems with a reliable and high-performance MOSFET.