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NTMFS4943NT1G

Part No NTMFS4943NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.3A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 20.9nC @ 10V
Max Input Capacitance 1401pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 910mW (Ta), 22.3W (Tc)
Maximum Rds On at Id,Vgs 7.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 120295-NTMFS4943NT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMFS4943NT1G CAD Model

Description

ON Semiconductor NTMFS4943NT1G Power MOSFET

The NTMFS4943NT1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the demanding requirements of modern electronic applications, offering a perfect blend of efficiency, reliability, and performance.

With its compact footprint, the NTMFS4943NT1G is housed in a space-saving 5x6mm² flat lead package that features a low profile and low resistance. The package is designed for optimal thermal performance and is well-suited for use in power management tasks where space is at a premium.

The device features a 30V drain-to-source voltage (VDS), which makes it suitable for a wide range of applications, including power supply circuits, motor drives, and high-efficiency DC-DC converters. The NTMFS4943NT1G boasts an impressive continuous drain current (ID) of 48A at 25°C, ensuring that it can handle high current loads without overheating or failing.

One of the key attributes of the NTMFS4943NT1G is its low on-resistance (RDS(on)), which stands at just 7.3 mΩ at a gate drive of 10V. This low RDS(on) translates to reduced conduction losses, making the device highly efficient for power conversion applications. Additionally, the MOSFET features fast switching speeds, which further enhance its efficiency and make it an excellent choice for high-frequency circuits.

The device also includes robust protection features, such as a 100% avalanche tested design and a maximum junction temperature of 150°C, ensuring reliable operation even under stressful conditions. These features contribute to the NTMFS4943NT1G's longevity and stable performance over its operational life.

In summary, the ON Semiconductor NTMFS4943NT1G Power MOSFET is a versatile and efficient solution for a variety of power management applications. Its low on-resistance, high current capability, and thermal efficiency make it a top choice for designers looking to optimize their power systems for better performance and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.6717 $74.6868
8+ $15.3199 $122.5592
12+ $14.8418 $178.1016
17+ $14.3624 $244.1608
21+ $13.8843 $291.5703
28+ $12.4474 $348.5272
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,570 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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