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NTMFS4946NT1G

Part No NTMFS4946NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V SO-8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 53nC @ 11.5V
Max Input Capacitance 3250pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 890mW (Ta), 55.5W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 100179-NTMFS4946NT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTMFS4946NT1G CAD Model

Description

NTMFS4946NT1G - ON Semiconductor

The NTMFS4946NT1G is a high-performance, single N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing advanced power management solutions that cater to a wide range of applications, including computing, automotive, consumer, LED lighting, industrial, communications, and medical sectors.

This particular MOSFET is part of the PowerTrench® series, which is renowned for its low on-resistance and minimal gate charge. The combination of these features makes the NTMFS4946NT1G an efficient choice for power conversion applications. With a compact footprint, it is housed in a space-saving 5x6 mm² footprint, which is critical for modern high-density circuit designs.

The NTMFS4946NT1G boasts a robust continuous drain current (ID) of 30.8 Amperes, and a drain-source voltage (VDS) of 30 Volts, which allows it to handle high current flows with ease. Furthermore, the device has an RDS(on) as low as 4.5 mOhm at a gate drive of 10V, ensuring lower conduction losses and improved overall efficiency.

Other key features of this MOSFET include its 100% avalanche tested design, which guarantees reliable performance under extreme conditions. The NTMFS4946NT1G also has a low gate charge (Qg), which reduces the power required to drive the MOSFET, leading to reduced switching losses. Its fast switching characteristics are essential for high-frequency power conversion systems where efficiency is paramount.

In terms of environmental compliance, the NTMFS4946NT1G is RoHS compliant, meaning it meets the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment. This makes it not only a high-performance component but also an environmentally conscious choice for manufacturers.

Overall, the NTMFS4946NT1G from ON Semiconductor is a powerful and reliable component that offers a blend of efficiency, performance, and compactness, making it an ideal choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7644 $61.9372
30+ $3.9097 $117.2910
46+ $3.7872 $174.2112
64+ $3.6648 $234.5472
82+ $3.5424 $290.4768
110+ $3.1763 $349.3930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,100 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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