The NTMFS4985NFT1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a leading force in the semiconductor industry. This high-performance, N-channel MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a perfect blend of efficiency, reliability, and power density.
Key Features
- Low RDS(on): The device boasts an exceptionally low on-resistance, resulting in reduced conduction losses and improved power efficiency.
- High Continuous Drain Current (ID): It is capable of supporting a high continuous drain current, making it suitable for high-power applications.
- Single Pulse Avalanche Energy Rated: This MOSFET is designed to handle high-energy pulses in avalanche and commutation modes, ensuring durability and stability under stress.
- RoHS Compliant: The NTMFS4985NFT1G is manufactured with environmentally friendly materials and complies with RoHS standards, making it suitable for use in a wide range of markets.
- Power 56 SO-8 FL Package: Enclosed in a compact, surface-mount package, it offers a space-saving solution without compromising on performance.
Applications
The ON Semiconductor NTMFS4985NFT1G is versatile enough to be used across various applications, including:
- DC/DC converters
- Power supply for CPUs in servers and desktops
- Motor control systems
- Power management solutions
- Automotive systems
- Synchronous rectification
Technical Specifications
| Parameter |
Value |
| VDS Max |
30V |
| RDS(on) Max (@ VGS = 10V) |
4.5mΩ |
| ID Max |
100A |
| Power Dissipation (PD) |
3.8W |
| Operating Temperature Range |
-55°C to +150°C |
With its robust design and exceptional performance, the NTMFS4985NFT1G from ON Semiconductor is an ideal choice for engineers looking to enhance system efficiency and reliability in high-power and high-performance applications.