The NTMFS4H01NT1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a testament to ON Semiconductor's commitment to providing high-performance components designed for a range of applications where efficiency and reliability are paramount.
Key Features
- N-Channel MOSFET: This device is an N-channel MOSFET that offers excellent on-state resistance and ensures a high degree of conductivity.
- High-Efficiency: With its low on-resistance (RDS(on)), the NTMFS4H01NT1G provides high efficiency, which is crucial for power management in modern electronic circuits.
- Power Dissipation: It is capable of withstanding significant power dissipation, which makes it suitable for high-power applications.
- Thermal Management: Enhanced thermal characteristics allow for better heat dissipation, contributing to the reliability and longevity of the device.
- Compact Size: The NTMFS4H01NT1G comes in a compact, surface-mount package, making it ideal for space-constrained applications.
Applications
Due to its robust performance characteristics, the NTMFS4H01NT1G is an excellent choice for a variety of applications, including:
- DC/DC Converters
- Power Supply Modules
- Motor Drives
- Computing Systems
- Automotive Components
- Switching Regulators
Product Specifications
| Parameter |
Value |
| Configuration |
Single |
| Channel Mode |
Enhancement |
| Channel Type |
N-Channel |
| Drain-Source Voltage (VDS) |
40V |
| Continuous Drain Current (ID) |
194A |
| Power Dissipation (PD) |
3.8W |
| RDS(on) |
1.35mΩ |
Quality and Reliability
ON Semiconductor ensures that the NTMFS4H01NT1G meets the highest quality and reliability standards. Customers can trust this MOSFET to deliver consistent performance and durability for their critical applications.