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NTMFS6H801NLT1G

Part No NTMFS6H801NLT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 24A/160A 5DFN / N-Channel 80 V 24A (Ta), 160A (Tc) 3.8W (Ta), 167W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 24A (Ta) , 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5126 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta) , 167W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NTMFS6
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337271-NTMFS6H801NLT1G
Ultra Librarian 3D Model Ultra Librarian NTMFS6H801NLT1G CAD Model

Description

NTMFS6H801NLT1G - ON Semiconductor

The NTMFS6H801NLT1G is a high-performance N-channel Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to meet the needs of a wide range of applications, offering an ideal solution for power management challenges. With its advanced technology, the NTMFS6H801NLT1G provides a combination of low on-resistance and high switching speed, making it an excellent choice for high-efficiency power conversion and switching applications.

Key Features:

  • Low On-Resistance: The NTMFS6H801NLT1G boasts a very low R<sub>DS(on) which enhances its efficiency by minimizing conduction losses. This feature is particularly beneficial in applications where reducing power loss is critical.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), allowing it to handle significant power without performance degradation, making it suitable for high-power applications.
  • High Switching Speed: The fast switching capability of this MOSFET ensures efficient operation at high frequencies, which is essential for reducing switching losses in power conversion systems.
  • Power-Saving: The device is designed to be power-efficient, which not only conserves energy but also extends the life of the product it is used in by reducing thermal stress.
  • Robust Thermal Performance: Enhanced thermal performance is achieved through an optimized package design, which allows for better heat dissipation and improved reliability under various operating conditions.

Applications:

The NTMFS6H801NLT1G is versatile and can be used in a multitude of applications, including:

  • DC/DC Converters
  • Power Supplies for Servers
  • Motor Drives
  • Power Management in Portable Devices
  • Computing and Networking Systems

ON Semiconductor's NTMFS6H801NLT1G is RoHS compliant and Halogen-free, reflecting the company's commitment to environmental sustainability. With its robust design and superior performance, this Power MOSFET is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1469 $51.5256
57+ $1.7616 $100.4112
88+ $1.7066 $150.1808
122+ $1.6515 $201.4830
157+ $1.5965 $250.6505
210+ $1.4313 $300.5730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 183 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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