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NTR1P02LT1G

Part No NTR1P02LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 20V 1.3A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 1.3A SOT-23
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 5.5nC @ 4V
Max Input Capacitance 225pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 750mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 025819-NTR1P02LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name NTR1P02L
Introduction Date December 12, 2001
ECCN EAR99
Country of Origin China, United States of America
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTR1P02LT1G CAD Model

Description

Introducing the NTR1P02LT1G Power MOSFET by ON Semiconductor

The NTR1P02LT1G is a cutting-edge Power MOSFET device designed and manufactured by the renowned ON Semiconductor. This high-performance component is engineered to meet the rigorous demands of modern electronic circuits, providing efficient power management and switching with minimal losses. The NTR1P02LT1G is an essential element for designers looking to optimize their power-sensitive applications in a variety of industries.

Key Features

  • Low Threshold Voltage: The device features a low threshold voltage, which makes it suitable for low-voltage applications and ensures low on-state resistance even at low gate voltages.
  • High Efficiency: With its low on-resistance and low gate charge, the NTR1P02LT1G ensures high efficiency, which is critical for reducing power losses and improving overall system performance.
  • Compact SOT-23 Package: Encased in a small surface-mount SOT-23 package, this MOSFET is ideal for space-constrained applications, allowing for a more compact and streamlined circuit design.
  • Robust Thermal Performance: The device boasts excellent thermal characteristics that contribute to its reliability and longevity, even under demanding conditions.

Applications

The versatility of the NTR1P02LT1G makes it suitable for a wide range of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery-Powered Devices
  • Load Switching
  • Motor Control Systems

Technical Specifications

The NTR1P02LT1G boasts impressive technical specifications that ensure reliable performance:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 1.1A
  • Power Dissipation (P<sub>D): 0.7W
  • R<sub>DS(on): Low on-state resistance
  • Configuration: Single

ON Semiconductor's commitment to quality and performance is evident in the NTR1P02LT1G Power MOSFET. It is a testament to their expertise in semiconductor technology, offering a reliable and efficient solution for power management challenges. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the NTR1P02LT1G is an excellent choice to enhance your application's performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
480+ $0.1043 $50.0640
1,170+ $0.0856 $100.1520
1,810+ $0.0829 $150.0490
2,495+ $0.0802 $200.0990
3,225+ $0.0776 $250.2600
4,315+ $0.0696 $300.3240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 222,000 pieces
MOQ: 480 pcs
Order Increment : 1 pcs
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