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NTR3162PT3G

Part No NTR3162PT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 10.3nC @ 4.5V
Max Input Capacitance 940pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 480mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 2.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1084005-NTR3162PT3G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Computers & Computer Peripherals, Portable Devices, Industrial
Ultra Librarian 3D Model Ultra Librarian NTR3162PT3G CAD Model

Description

ON Semiconductor NTR3162PT3G Overview

The ON Semiconductor NTR3162PT3G is a high-performance P-channel Power MOSFET designed for a wide range of applications that require efficient power management. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, offering a blend of low on-resistance and high switching speed, making it suitable for both high-speed switching and power conversion applications.

Key Features

  • Low On-Resistance: The NTR3162PT3G boasts an extremely low on-resistance, typically just 62 mΩ at Vgs = -4.5V. This characteristic ensures minimal power loss and heat generation, thereby improving overall efficiency.
  • High Current Capability: With a continuous drain current of -3.7 A, this MOSFET can handle significant power, making it suitable for demanding applications.
  • Low Threshold Voltage: The device operates at a low threshold voltage, enabling it to be used in logic-level applications where lower gate drive voltages are needed.
  • Enhanced Durability: The NTR3162PT3G is encapsulated in a robust SOT-23 package, providing excellent mechanical durability and thermal performance.
  • Lead-Free and RoHS Compliant: In line with modern environmental standards, this component is lead-free and RoHS compliant, minimizing the environmental impact of electronic waste.

Applications

The versatility of the NTR3162PT3G allows it to be used in a variety of applications, including:

  • Power Management Circuits
  • Battery Powered Systems
  • Load Switches
  • DC/DC Converters
  • Motor Drives

Technical Specifications

Parameter Value Drain-to-Source Voltage (Vds) -20V Gate-to-Source Voltage (Vgs) ±8V Continuous Drain Current (Id) -3.7A Power Dissipation (Pd) 1.25W Operating Temperature Range -55°C to +150°C

With its exceptional performance and reliability, the ON Semiconductor NTR3162PT3G is an excellent choice for designers seeking a P-channel MOSFET that delivers both power efficiency and high-speed operation.

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