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NTZD3155CT2G

Part No NTZD3155CT2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SOT-563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 540mA, 430mA
Maximum Rds On at Id,Vgs 550 mOhm @ 540mA, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 150pF @ 16V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 025844-NTZD3155CT2G
Family Name NTZD3155C
Introduction Date July 08, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTZD3155CT2G CAD Model

Description

The NTZD3155CT2G is a state-of-the-art, dual N-Channel, enhancement mode field-effect transistor (FET) from ON Semiconductor, designed for power management applications. This product is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features

  • Low On-Resistance: The NTZD3155CT2G boasts an incredibly low on-resistance, which significantly reduces conduction losses and improves overall efficiency in circuits where it is deployed.
  • High-Speed Switching: Engineered for rapid switching, this FET is ideal for high-frequency applications, providing swift transitions and minimizing energy loss.
  • Dual N-Channel MOSFET: The dual N-Channel configuration allows for compact circuit designs by integrating two transistors within a single package, thereby saving space and reducing component count.
  • Low Threshold Voltage: It features a low threshold voltage that ensures low-voltage operation, making it suitable for battery-powered devices and low-voltage logic circuits.
  • Compact SOT-563 Package: Encased in a small SOT-563 surface-mount package, the NTZD3155CT2G is designed for space-constrained applications without compromising performance.

Applications

The NTZD3155CT2G is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • Load/Power Switching
  • DC/DC Converters
  • Battery Management Systems
  • Portable Electronic Devices

Environmental and Quality Certifications

ON Semiconductor ensures that the NTZD3155CT2G meets rigorous environmental and quality standards, including:

  • RoHS Compliance
  • Pb-Free and Halogen-Free Material
  • Qualified to AEC-Q101 Standards for Automotive Applications

In conclusion, the NTZD3155CT2G from ON Semiconductor is a high-performance, energy-efficient solution for modern electronic applications requiring dual N-Channel MOSFETs. Its low on-resistance, high-speed switching capabilities, and compact footprint make it an excellent choice for designers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1054 $50.0650
1,160+ $0.0865 $100.3400
1,790+ $0.0838 $150.0020
2,470+ $0.0811 $200.3170
3,190+ $0.0784 $250.0960
4,270+ $0.0703 $300.1810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 518,806 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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