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NVMFD5485NLWFT1G

Part No NVMFD5485NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 5.3A DFN8  /  Mosfet Array 2 N-Channel (Dual) 60V 5.3A 2.9W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.3A
Rds On (Max) @ Id, Vgs 44mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Power - Max 2.9W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5485
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNVMFD5485NLWFT1G,2156-NVMFD5485NLWFT1G
Standard Package 1,500
Win Source Part Number 990484-NVMFD5485NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5485NLWFT1G CAD Model

Description

ON Semiconductor NVMFD5485NLWFT1G - Robust Power MOSFET

The NVMFD5485NLWFT1G from ON Semiconductor is a high-performance Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This component is part of ON Semiconductor's extensive portfolio of energy-efficient devices, specifically engineered to reduce energy consumption and extend the life of products.

Key Features

  • High Current Capability: This MOSFET can handle significant current, making it suitable for high-power applications.
  • Low RDS(on): The device features a low on-resistance, which translates to reduced power losses and improved efficiency during operation.
  • Advanced Trench Technology: Utilizing cutting-edge trench technology, the NVMFD5485NLWFT1G offers superior performance and reliability.
  • Power-SO8 FLMP Package: The device comes in a compact Power-SO8 FLMP package that ensures a small footprint while providing exceptional thermal performance.

Applications

The versatility of the NVMFD5485NLWFT1G makes it an ideal choice for a variety of applications, including:

  • DC/DC Converters
  • Power Management Systems
  • Motor Drives
  • Computing and Server Systems
  • Automotive Electronics

Product Specifications

The NVMFD5485NLWFT1G boasts impressive specifications that ensure its suitability for demanding environments:

  • Drain-to-Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • RDS(on) (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NVMFD5485NLWFT1G is no exception, undergoing rigorous testing to ensure it meets the stringent requirements for industrial and automotive applications. With its robust design and advanced manufacturing techniques, this Power MOSFET is built to deliver consistent performance over an extended product life.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.6881 $50.6430
75+ $1.3851 $103.8825
115+ $1.3418 $154.3070
155+ $1.2986 $201.2830
200+ $1.2553 $251.0600
270+ $1.1254 $303.8580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,370 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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