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NVMFD5489NLWFT1G

Part No NVMFD5489NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 4.5A DFN8  /  Mosfet Array 2 N-Channel (Dual) 60V 4.5A 3W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Power - Max 3W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5489
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNVMFD5489NLWFT1G,2156-NVMFD5489NLWFT1G-OS
Standard Package 1,500
Win Source Part Number 1157009-NVMFD5489NLWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5489NLWFT1G CAD Model

Description

Introducing the NVMFD5489NLWFT1G Power MOSFET

The NVMFD5489NLWFT1G is a cutting-edge power MOSFET device engineered by ON Semiconductor, a leader in power and signal management solutions. This power MOSFET is designed to provide efficient power conversion with high performance in a compact form factor, making it an ideal choice for a wide range of applications, including power supply, computing, automotive, and industrial systems.

Key Features:

  • Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Power Density: With its PowerTrench<sup>® technology, the NVMFD5489NLWFT1G achieves high power density, which is crucial for applications that require a small footprint without compromising performance.
  • High Switching Speed: The device's fast switching capabilities ensure that it can handle high-frequency operations, reducing switching losses and improving overall system efficiency.
  • Robust Thermal Performance: The NVMFD5489NLWFT1G is designed to operate effectively under high thermal conditions, thanks to its advanced packaging that aids in excellent heat dissipation.

Product Specifications:

  • Package: The MOSFET comes in a compact 5x6 mm² footprint, encapsulated in a Pb-free, Halogen-free/BFR-free and RoHS compliant package, ensuring environmental sustainability.
  • Drain-to-Source Voltage (V<sub>DSS): It supports a drain-to-source voltage of up to 30V, making it suitable for a variety of low to medium voltage applications.
  • Continuous Drain Current (I<sub>D): The device can handle a continuous drain current of up to 17A, providing ample current for demanding applications.
  • Gate Charge (Q<sub>g): The low gate charge ensures reduced driving power, which translates to lower switching losses.

The NVMFD5489NLWFT1G by ON Semiconductor represents a blend of performance, efficiency, and reliability. Its advanced features are tailored to meet the stringent requirements of today's energy-conscious electronic designs. Whether you're developing power management systems, working on automotive electronics, or designing industrial machinery, this power MOSFET will help you achieve a more efficient, compact, and robust solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4832 $59.5968
57+ $2.0374 $116.1318
88+ $1.9738 $173.6944
121+ $1.9101 $231.1221
157+ $1.8464 $289.8848
210+ $1.6553 $347.6130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,780 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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