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NVMFD5853NWFT1G

Part No NVMFD5853NWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 12A SO8FL  /  Mosfet Array 2 N-Channel (Dual) 40V 12A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 12A
Rds On (Max) @ Id, Vgs 10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 25V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Base Product Number NVMFD5
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNVMFD5853NWFT1G,2156-NVMFD5853NWFT1G
Standard Package 1,500
Win Source Part Number 1010105-NVMFD5853NWFT1G
Ultra Librarian 3D Model Ultra Librarian NVMFD5853NWFT1G CAD Model

Description

The NVMFD5853NWFT1G is a high-performance, Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to meet the rigorous demands of a variety of applications, particularly those in the automotive industry, where reliability and efficiency are paramount.

Key Features

  • High Current Capacity: This MOSFET is capable of handling high current loads, making it suitable for power-intensive operations.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) minimizes power loss and improves overall efficiency, which is critical for battery-powered applications.
  • High Switching Speed: With fast switching capabilities, this component reduces transition losses and enhances performance in high-frequency circuits.
  • Thermal Management: The NVMFD5853NWFT1G is designed for superior thermal performance, ensuring reliability even under high temperature operating conditions.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench technology offers reduced gate charge and lower power dissipation, contributing to the MOSFET's high efficiency.

Applications

The versatility of the NVMFD5853NWFT1G allows it to be used in a wide range of applications. It is particularly suited for:

  • Automotive applications such as powertrain systems, DC/DC converters, and LED lighting
  • Power management tasks in consumer electronics
  • Industrial power supplies and motor control circuits
  • Computing systems where efficient power conversion is necessary

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 25V Continuous Drain Current (I<sub>D) 60A Power Dissipation (P<sub>D) 48W Operating Temperature Range -55°C to +175°C

The NVMFD5853NWFT1G is a testament to ON Semiconductor's commitment to providing innovative, high-quality components that push the boundaries of efficiency, performance, and reliability.

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