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NVMFS3D0P04M8LT1G

Part No NVMFS3D0P04M8LT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MV8 P INITIAL PROGRAM / P-Channel 40 V 28A (Ta), 183A (Tc) 3.9W (Ta), 171W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta) , 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 30A,10V
Vgs(th) (Max) @ Id 2.4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5827 pF @ 20 V
Power Dissipation (Max) 3.9W (Ta) , 171W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1340642-NVMFS3D0P04M8LT1G
Ultra Librarian 3D Model Ultra Librarian NVMFS3D0P04M8LT1G CAD Model

Description

ON Semiconductor NVMFS3D0P04M8LT1G Overview

The ON Semiconductor NVMFS3D0P04M8LT1G is a high-performance, Power MOSFET designed to deliver efficient power conversion in a compact package. This semiconductor device is ideal for a wide range of applications, including automotive systems, power management circuits, and high-speed switching applications. Its advanced technology ensures low on-resistance and minimal gate charge, leading to reduced conduction and switching losses.

Key Features

  • Low R<sub>DS(on): The device features a very low drain-to-source on-resistance, which translates into reduced power losses and improved efficiency in operation.
  • High Continuous Drain Current (I<sub>D): It is capable of supporting a high continuous drain current, making it suitable for applications requiring robust current handling capabilities.
  • Power-SO8FL Package: The NVMFS3D0P04M8LT1G comes in a compact Power-SO8FL package, which is designed for optimized thermal performance and space-saving on the PCB.
  • Fast Switching Speed: With its fast switching capabilities, this MOSFET can operate efficiently at high frequencies, which is beneficial for power supplies and converters.
  • Low Gate Charge (Q<sub>G): The low gate charge ensures that the device can switch on and off with minimal power loss, making it suitable for high-efficiency applications.
  • Automotive Qualified: The NVMFS3D0P04M8LT1G is qualified for automotive applications, complying with the rigorous standards required for vehicular electronics.

Applications

The versatility of the NVMFS3D0P04M8LT1G makes it an excellent choice for a variety of applications. It is particularly well-suited for:

  • DC/DC Converters
  • Motor Drives
  • Power Supply Modules
  • Automotive Electronics
  • High-Speed Switching Circuits

Conclusion

The ON Semiconductor NVMFS3D0P04M8LT1G is a powerful and reliable MOSFET that combines efficiency with high performance. Its low on-resistance, high current handling, and fast switching capabilities make it a top choice for designers looking to optimize power conversion in their applications. The device's robustness and automotive qualification further enhance its appeal for use in critical and high-reliability environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,060 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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