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NVMFS5832NLWFT1G

Part No NVMFS5832NLWFT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 127W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN
Win Source Part Number 1084140-NVMFS5832NLWFT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NVMFS5832NLWFT1G CAD Model

Description

ON Semiconductor NVMFS5832NLWFT1G Power MOSFET

The ON Semiconductor NVMFS5832NLWFT1G is a state-of-the-art power MOSFET designed to deliver high efficiency and performance for a wide range of applications. This advanced MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, engineered to meet the rigorous demands of modern electronic designs.

With its compact footprint, the NVMFS5832NLWFT1G offers a low on-resistance and high current handling capability, making it an ideal choice for power management tasks. The device is encapsulated in a 5x6mm² flat lead package, which is optimized for minimal conduction losses and provides excellent thermal performance.

Key Features:

  • Low R<sub>DS(on): The NVMFS5832NLWFT1G boasts an extremely low on-resistance, which translates to reduced power losses and improved efficiency in applications.
  • High Continuous Drain Current (I<sub>D): This MOSFET can handle a high amount of continuous current, making it suitable for high-power applications.
  • Single N-Channel: As a single N-channel MOSFET, it offers simplicity in design and ease of integration into various circuit topologies.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's overall performance by optimizing the cell structure for reduced gate charge and faster switching speeds.
  • Environmentally Friendly: The NVMFS5832NLWFT1G is RoHS compliant, ensuring that it meets current environmental standards by avoiding the use of hazardous substances.

Applications:

The versatility of the NVMFS5832NLWFT1G allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power supplies
  • Battery management systems
  • Automotive systems
  • Load switches

ON Semiconductor's commitment to quality and performance is evident in the NVMFS5832NLWFT1G MOSFET. Its robust design and advanced features make it a reliable and efficient component for engineers looking to optimize their power management systems. Whether for consumer electronics, industrial, or automotive applications, this MOSFET is engineered to deliver top-notch performance where it counts.

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