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NVMFS6B14NLWFT3G

Part No NVMFS6B14NLWFT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 11A/55A 5DFN  /  N-Channel 100 V 11A (Ta), 55A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
Win Source Part Number 987132-NVMFS6B14NLWFT3G
Ultra Librarian 3D Model Ultra Librarian NVMFS6B14NLWFT3G CAD Model

Description

ON Semiconductor NVMFS6B14NLWFT3G: Power MOSFET

The NVMFS6B14NLWFT3G from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of power conversion and management applications. This advanced MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, offering a blend of low on-resistance and robust switching performance.

Key Features:

  • Low On-Resistance: The device features an ultra-low on-resistance of typically just 6.3 mΩ at 10 V, ensuring high efficiency in power conversion which translates to less power loss and improved overall system performance.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of 17 A, making it suitable for applications that require high current handling capabilities.
  • High-Temperature Performance: The MOSFET is designed to operate reliably over a wide temperature range, with a maximum junction temperature of 150°C, catering to applications with higher thermal demands.
  • Power Dissipation: With a power dissipation of 48 W, this device can handle significant amounts of power, making it ideal for high-power applications.
  • Single N-Channel: As a single N-Channel MOSFET, it is optimized for fast switching applications and is typically used in power supply and load switch applications.

Applications:

The NVMFS6B14NLWFT3G is suitable for a wide range of applications, including:

  • DC/DC Converters
  • Power Management in Computing and Telecom
  • Motor Control Systems
  • Load Switching
  • Automotive Applications

This device comes in a compact 5x6 mm² footprint, which is part of ON Semiconductor's space-saving PowerTrench® technology, making it ideal for space-constrained applications. With its advanced trench technology, the NVMFS6B14NLWFT3G provides reduced gate charge and lower power losses, enabling high-efficiency power management in a variety of electronic systems.

With its robust package and leading-edge performance characteristics, the NVMFS6B14NLWFT3G from ON Semiconductor is a reliable choice for engineers and designers looking to optimize their power circuits for efficiency and thermal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7917 $53.7510
70+ $1.4702 $102.9140
110+ $1.4242 $156.6620
150+ $1.3783 $206.7450
190+ $1.3323 $253.1370
255+ $1.1945 $304.5975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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